Decreasing the emission wavelength of GaAs–AlGaAs quantum cascade lasers by the incorporation of ultrathin InGaAs layers
- 22 January 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (4), 413-415
- https://doi.org/10.1063/1.1343841
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- AlAs/GaAs quantum cascade lasers based on large direct conduction band discontinuityApplied Physics Letters, 2000
- Improved temperature performance of Al0.33Ga0.67As/GaAs quantum-cascade lasers with emission wavelength at λ≈11 μmApplied Physics Letters, 2000
- Controlling the performance of GaAs–AlGaAs quantum-cascade lasers via barrier height modificationsApplied Physics Letters, 2000
- Low-loss Al-free waveguides for unipolar semiconductor lasersApplied Physics Letters, 1999
- GaAs/AlGaAs-based microcylinder lasers emitting at 10 μmApplied Physics Letters, 1999
- GaAs/Al x Ga 1−x As quantum cascade lasersApplied Physics Letters, 1998
- Near-infrared wavelength intersubband transitions in high indium content InGaAs/AlAs quantum wells grown on GaAsElectronics Letters, 1997
- Near-infrared Intersubband Transitions in InGaAs/AlAs Quantum Wells on GaAs SubstrateJapanese Journal of Applied Physics, 1996
- Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructuresPhysical Review B, 1989
- Experimental probing of quantum-well eigenstatesPhysical Review Letters, 1989