Comments on the hole mass in silicon inversion layers
- 30 September 1976
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 19 (11), 1031-1035
- https://doi.org/10.1016/0038-1098(76)90092-2
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Surface quantum oscillations in (100) inversion layers under uniaxial stressSolid State Communications, 1976
- Hole cyclotron masses in silicon MOS devicesSolid State Communications, 1975
- Hartree Approximation for the Electronic Structure of ap-Channel Inversion Layer of Silicon M. O. S.Progress of Theoretical Physics Supplement, 1975
- Quantum oscillations in p-type inversion layers of (111) and (100) silicon field effect transistorsSolid State Communications, 1974
- Oscillatory Magnetoconductance of-Type Inversion Layers in Si SurfacesPhysical Review Letters, 1974
- Shubnikov-de Haas oscillations in p-type inversion layers on n-type siliconSolid State Communications, 1974
- Motion of Electrons and Holes in Perturbed Periodic FieldsPhysical Review B, 1955