Possible observation of an electronic phase transition in Sb doped Si

Abstract

Presents detailed results on the low-temperature magneto-resistance of Sb doped Si. Evidence is presented for the existence of the T^1/2 correction due to the electron-electron interaction. It is suggested that the large change in density of states leads to a combination of localisation and interaction effects. The authors find a large rise in conductivity with decreasing temperature which they ascribe to an electronic phase transition which may be driven by the interaction.