Buried-channel GaAs MESFET's on MBE material: Scattering parameters and intermodulation signal distortion

1 May 1982

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 29 (5), 811-813
https://doi.org/10.1109/T-ED.1982.20782

Abstract

Buried-channel GaAs MESFET's (BFET's) on MBE material have been fabricated. The bias dependence of the scattering parameters is strongly reduced applying the BFET principle. As a result the third-order intermodulation products are the smallest reported thus far,-45 dBm at an input power level of 8 dBm. These data are compared with those of VPE fabricated devices. The technology as well as the fabrication of the MBE layers is described.

Keywords

SCATTERING
INTERMODULATION
BURIED
FABRICATED
GAAS MESFET'S
MBE MATERIAL
CHANNEL GAAS

Cited by 2 articles