A metal-insulator transition in the impurity band of n-type GaAs induced by loss of dimension
- 28 April 1977
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 10 (8), L173-L177
- https://doi.org/10.1088/0022-3719/10/8/003
Abstract
It is suggested that a transition from three-dimensional to two-dimensional transport in the impurity band of n-type GaAs occurs when the thickness of the conducting layer becomes sufficiently small. Depleting electrons from the two-dimensional impurity band results in an Anderson transition. The minimum metallic conductance of the system was found to be in reasonable agreement with theory.Keywords
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