Uniform and thermally stable AuGeNi ohmic contacts to GaAs
- 15 June 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (12), 1141-1143
- https://doi.org/10.1063/1.95736
Abstract
An in situ rf sputter precleaning of the GaAs substrate before AuGeNi ohmic metal deposition yields contact resistance Rc=0.11 Ω mm at a peak doping of ∼1018/cm3. Excellent uniformity and thermal stability are achieved across the wafer. The contacts do not deteriorate appreciably after themal treatment at 410 °C for 57 h.Keywords
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