High resolution electron beam lithography on CaF2
- 15 February 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (4), 468-469
- https://doi.org/10.1063/1.94769
Abstract
We have fabricated 30‐nm lines on 200‐nm centers in CaF2 using a scanning transmission electron microscope. The lines were written by electron beam radiolysis of a fine grain polycrystalline CaF2 film and reaction to CaO followed by development in H2O.Keywords
This publication has 4 references indexed in Scilit:
- Thin-film CaF2 inorganic electron resist and optical-read storage mediumApplied Physics Letters, 1982
- Formation of an Epitaxial Si/Insulator/Si Structure by Vacuum Deposition of CaF2 and SiJapanese Journal of Applied Physics, 1982
- I n s i t u vaporization of very low molecular weight resists using 1/2 nm diameter electron beamsJournal of Vacuum Science and Technology, 1981
- 250-Å linewidths with PMMA electron resistApplied Physics Letters, 1978