300 GHz f/sub max/ self-aligned SiGeC HBT optimized towards CMOS compabitility
- 13 December 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Deep trench isolation effect on self-heating and RF performances of SiGeC HBTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Silicon Heterostructure HandbookPublished by Taylor & Francis ,2005