A possible model of amorphous silicon and germanium
- 27 November 1973
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 6 (23), L427-L432
- https://doi.org/10.1088/0022-3719/6/23/001
Abstract
A structural model is proposed with regions consisting of identical two-dimensionally perfect layers, stacked randomly on top of one another such that bonds in adjacent layers are in either diamond-like (staggered) or wurtzite-like (eclipsed) configurations. The model has perfect tetrahedral coordination everywhere throughout such regions and is consistent with electron microscopy results and with the observed diffraction data, especially those features corresponding to the diamond (1,1,1) and (2,2,0), (3,1,1) peaks.Keywords
This publication has 11 references indexed in Scilit:
- Theory of Electron Micrographs of Amorphous MaterialsPhysical Review B, 1973
- X-Ray Photoemission Spectra of Crystalline and Amorphous Si and Ge Valence BandsPhysical Review Letters, 1972
- On the structure of amorphous Ge and SiThin Solid Films, 1972
- Electronic density of states and optical properties of polytypes of germanium and siliconJournal of Non-Crystalline Solids, 1972
- The structure of amorphous Si and GePhilosophical Magazine, 1972
- The Observation of Ordered Domains in Amorphous Ge by Dark‐Field Electron MicroscopyPhysica Status Solidi (b), 1971
- Structural model for amorphous silicon and germaniumJournal of Non-Crystalline Solids, 1971
- Evidence of Voids Within the As-Deposited Structure of Glassy SiliconPhysical Review Letters, 1969
- Short-range order in amorphous germaniumJournal of Non-Crystalline Solids, 1969
- Short-range order in amorphous semiconductorsJournal of Non-Crystalline Solids, 1969