Interface-trap generation modeling of Fowler–Nordheim tunnel injection into ultrathin gate oxide
- 1 July 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (1), 387-391
- https://doi.org/10.1063/1.335690
Abstract
Two mechanisms for interface-trap generation during Fowler–Nordheim tunnel injection into gate oxide are confirmed by the results of experiments with changes in the interface-trap density for positive and negative gate bias injections. One mechanism is independent of gate bias polarity during injection, the other mechanism is present only in negative gate bias injection. Agreements between the measured and calculated generation cross sections for both mechanisms indicate that: (i) The first mechanism is quantitatively explained using a broken-bond model by taking account of electron heating due to an oxide field during passage through the oxide conduction band. (ii) The second mechanism is quantitatively explained using a heated electron impact model where electrons heated by the oxide field generate interface traps by directly breaking the interface weak bonds when electrons cross the interface between the SiO2 and the Si substrate.Keywords
This publication has 11 references indexed in Scilit:
- Comparative studies of tunnel injection and irradiation on metal oxide semiconductor structuresJournal of Applied Physics, 1982
- Photoemission measurements of interface barrier energies for tunnel oxides on siliconApplied Physics Letters, 1980
- The physics of excess electron velocity in submicron-channel FET’sJournal of Applied Physics, 1977
- Origin of Interface States and Oxide Charges Generated by Ionizing RadiationIEEE Transactions on Nuclear Science, 1976
- Oxide thickness dependence of electron-induced surface states in MOS structuresApplied Physics Letters, 1975
- Low energy electron irradiation of the Si-SiO2 interfaceThin Solid Films, 1972
- Electrochemical Charging of Thermal SiO2 Films by Injected Electron CurrentsJournal of Applied Physics, 1971
- Model for Radiation-Induced Charge Trapping and Annealing in the Oxide Layer of MOS DevicesJournal of Applied Physics, 1969
- Fowler-Nordheim Tunneling into Thermally Grown SiO2Journal of Applied Physics, 1969
- Radiation-Induced Perturbations of the Electrical Properties of the Silicon-Silicon Dioxide InterfaceIEEE Transactions on Nuclear Science, 1969