Spin Relaxation in GaAs(110) Quantum Wells
- 15 November 1999
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 83 (20), 4196-4199
- https://doi.org/10.1103/physrevlett.83.4196
Abstract
We investigated electron spin relaxation time in (110) quantum wells (QWs), in which a predominant spin scattering mechanism [D'yakonov-Perel' (DP) mechanism] for conventional (100) QWs is substantially suppressed; in (110) QWs was of nanosecond order at room temperature, more than an order of magnitude longer than that of the (100) counterpart. The mechanism responsible for the spin relaxation was examined by studying the quantized energy, electron mobility, and temperature dependences of . The results suggest that in the absence of DP interaction, electron-hole exchange interaction limits in a wide temperature range ( ).
Keywords
This publication has 18 references indexed in Scilit:
- Spin relaxation of conduction electronsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999
- Spin injection into semiconductorsApplied Physics Letters, 1999
- Lateral drag of spin coherence in gallium arsenideNature, 1999
- Spin transport in GaAsApplied Physics Letters, 1998
- Making Nonmagnetic Semiconductors FerromagneticScience, 1998
- Resonant Spin Amplification in-Type GaAsPhysical Review Letters, 1998
- Room-Temperature Spin Memory in Two-Dimensional Electron GasesScience, 1997
- Exciton spin dynamics in GaAs quantum wellsJournal of Luminescence, 1997
- Spin Quantum Beats of 2D ExcitonsPhysical Review Letters, 1997
- Room-temperature electron spin dynamics in GaAs/AlGaAs quantum wellsApplied Physics Letters, 1996