Rapid thermal nitridation of thin thermal silicon dioxide films

Abstract

The electrical characteristics of thin nitrided thermal silicon dioxide films prepared by a new rapid thermal process are described. This process is performed in a controlled gas ambient under an incoherent photon flux with a duration typically less than 60 s. It allows the incorporation of a controlled nitride layer in the bulk (oxinitride), on the surface, or at the silicon interface of the oxide. Gate dielectrics with superior electrical and chemical properties have been obtained. Applications in metal-oxide-semiconductor integrated circuit technologies are suggested.