Magneto-Optical Oscillations in the Free Carrier and Interband Absorption of Semiconductors

Abstract

In the region of the band edge of a degenerate $n$-type InSb sample, at fixed wavelength, oscillations in the absorption have been observed which are periodic in $\frac{1}{H}$. The period of these oscillations yields information about the Fermi surface. In the region of free carrier absorption oscillations in the absorption have been observed which are periodic in $\frac{1}{H}$, the period yielding the free carrier effective mass. The two measurements hold promise of an optical means of measuring both carrier concentration and effective mass of free carriers in semiconductors.