Boron implantations in silicon: A comparison of charge carrier and boron concentration profiles
- 1 July 1974
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 4 (2), 125-133
- https://doi.org/10.1007/bf00884267
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Profiles of boron implantations in silicon measured by secondary ion mass spectrometryRadiation Effects, 1973
- Anodic oxidation as sectioning technique for the analysis of impurity concentration profiles in siliconThin Solid Films, 1971
- Effect of Surface Treatments on Silicon Hall MeasurementsJournal of Applied Physics, 1969
- Measurement of resistivity and mobility in silicon epitaxial layers on a control waferSolid-State Electronics, 1966
- RANGE OF ENERGETIC Xe125 IONS IN MONOCRYSTALLINE SILICONCanadian Journal of Physics, 1964
- Electrode Reactions and Mechanism of Silicon Anodization in N-MethylacetamideJournal of the Electrochemical Society, 1964
- Hole and electron mobilities in doped silicon from radiochemical and conductivity measurementsJournal of Physics and Chemistry of Solids, 1960
- Theory of an Experiment for Measuring the Mobility and Density of Carriers in the Space-Charge Region of a Semiconductor SurfacePhysical Review B, 1958
- Anodic Formation of Oxide Films on SiliconJournal of the Electrochemical Society, 1957
- Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and PhosphorusPhysical Review B, 1949