Resonance depolarization ofB12implanted in metallic and semiconductor hosts

Abstract

Resonance depolarization measurements have been made on ${}_{}{}^{12}{}_{}{}^{}\mathrm{B}$ implanted in the semiconducting hosts silicon, germanium, and silicon carbide, and in the face-centered cubic metal hosts platinum, rhodium, palladium, gold, copper, aluminum, and sliver. The Knight shifts of ${}_{}{}^{12}{}_{}{}^{}\mathrm{B}$ in the metallic hosts have been obtained by comparison of the resonant frequencies in silicon and metallic hosts. The measured Knight shifts $\frac{\Delta \mu }{\mu }$ are: [Pt; -10(3) × ${10}^{-5\mathrm{}}$], [Rh; 4(4) × ${10}^{-5\mathrm{}}$], [Pd; 11(4) × ${10}^{-5\mathrm{}}$], [Au; 54(3) × ${10}^{-6\mathrm{}}$], [Cu; 60(6) × ${10}^{-5\mathrm{}}$], [Al; 66(9) × ${10}^{-5\mathrm{}}$], and [Ag; 67(3) × ${10}^{-5\mathrm{}}$]. The effective ${}_{}{}^{12}{}_{}{}^{}\mathrm{B}$ magnetic moment is determined to be 1.002 82(2)${\mathrm{\mu }}_{\mathit{N}}$ in Si, 1.002 91(2)${\mathrm{\mu }}_{\mathit{N}}$ in Ge, and 1.002 87(2)${\mathrm{\mu }}_{\mathit{N}}$ in SiC hosts.