Lattice relaxation, radiative and non-radiative deexcitation at localized defects
- 1 January 1983
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 72 (1), 55-72
- https://doi.org/10.1080/00337578308218626
Abstract
The influence of defect-lattice coupling on energy structure and recombination processes at localized defects is discussed. The emphasis is put on those processes in which the charge state of the defect changes. Among the topics discussed are: extrinsic self-trapping, negative U defects, metastable defect states, multiphonon recombination and recombination induced defect reactions.Keywords
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