Floating-gate technique applied to two-dimensional systems
- 15 January 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (2), 1529-1532
- https://doi.org/10.1103/physrevb.33.1529
Abstract
We report a new technique of using a floating-gate capacitive structure to measure the electrochemical potential difference between a reference conductor and the material in question as a function of some external parameter. It is illustrated by measurements on two two-dimensional systems: Si metal-oxide-semiconductor structures and (Ga,Al)As:GaAs heterostructures.Keywords
This publication has 8 references indexed in Scilit:
- Density of States and de Haas—van Alphen Effect in Two-Dimensional Electron SystemsPhysical Review Letters, 1985
- Specific Heat of Two-Dimensional Electrons in GaAs-GaAlAs MultilayersPhysical Review Letters, 1985
- Hysteresis phenomena in charging of Si Mosfet in quantizing magnetic fieldSolid State Communications, 1984
- Magnetization measurements on a two-dimensional electron systemSurface Science, 1984
- Two-Dimensional Magnetotransport in the Extreme Quantum LimitPhysical Review Letters, 1982
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall ResistancePhysical Review Letters, 1980
- Magneto-Oscillatory Conductance in Silicon SurfacesPhysical Review Letters, 1966