Analysis of deterioration in In solder for GaAlAs DH lasers
- 1 December 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (11), 861-863
- https://doi.org/10.1063/1.90984
Abstract
The deterioration of In solder associated with the degradation of GaAlAs DH lasers has been investigated. The deterioration of In solder is found to be caused by the diffusion of Au atoms into In solder. The increase in the thermal resistance of DH lasers is observed for the storage test. The increase in the thermal resistance is caused by the formation of the intermetallics between In and Au, which is thermally activated.Keywords
This publication has 3 references indexed in Scilit:
- Aging characteristics of Ga1−xAlxAs double-heterostructure lasers bonded with gold eutectic alloy solderApplied Physics Letters, 1979
- The temperature dependence of degradation mechanisms in long-lived (GaAl)As DH lasersJournal of Applied Physics, 1978
- Accelerated step-temperature aging of AlxGa1−xAs heterojunction laser diodesApplied Physics Letters, 1978