Growth of epitaxial NiSi2 on Si(111) at room temperature

Abstract

Epitaxial type B NiSi₂ thin layers have been grown at room temperature on Si(111). Deposition of a few monolayers of nickel followed by codeposition of NiSi₂ has led to the growth of high quality single‐crystal layers, with ion channeling χ_min 2 interface. Codeposition at room temperature on annealed silicide thin layers also led to the overgrowth of high quality NiSi₂. These results are suggestive of type B NiSi₂ formation on Si(111) upon deposition of a few monolayers of nickel at room temperature.