New experimental evidence of the periodic surface structure in laser annealing
- 15 November 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (10), 782-784
- https://doi.org/10.1063/1.90977
Abstract
This letter presents a study of the nature of the periodic structure observed on the edge of laser‐annealed spots on ion‐implanted silicon. The direction of the periodic fringes was always found to be about perpendicular to the E vector of the light for linearly polarized beams. No fringe pattern was observed for circular polarization. We suggest that the pattern observed is due to heating by a standing wave resulting from the interference of the impinging wave and a radial (longitudinal) scattered wave.Keywords
This publication has 4 references indexed in Scilit:
- On the origin of periodic surface structure of laser-annealed semiconductorsApplied Physics Letters, 1978
- Periodic regrowth phenomena produced by laser annealing of ion-implanted siliconApplied Physics Letters, 1978
- Annealing of Te-implanted GaAs by ruby laser irradiationApplied Physics Letters, 1978
- Laser annealing of boron-implanted siliconApplied Physics Letters, 1978