Enhancement of drain current density by inserting 3nm Al layer in the gate of AlGaN∕GaN high-electron-mobility transistors on 4in. silicon
- 6 November 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (19)
- https://doi.org/10.1063/1.2386919
Abstract
No abstract availableKeywords
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