Temperature dependence of the saturation current of MOST's

Abstract

The saturation current ofn-enhancement silicon MOST's has been investigated as function of temperature. The results are in reasonable agreement with a simple theoretical expression which takes into account the field dependence of electron mobility. It is shown that the effective incremental mobility becomes fairly independent of temperature, and varies inversely proportional to the gate voltage VG, if\micro V_{G}/\upsilon_{s}Lis about unity, where µ is the low-field drift mobility, υs, is the saturation drift velocity, andLis the channel length.