Comparison of theoretical and experimental values of the capacitance of diffused junctions
- 1 October 1972
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (10), 4040-4050
- https://doi.org/10.1063/1.1660872
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Numerical calculations of the capacitance of linearly graded Si p-n junctionsElectronics Letters, 1969
- Use of space-charge approximation as trial solution in the computation of potential distributions in semiconductor devicesElectronics Letters, 1969
- Evaluation of doping profiles from capacitance measurementsSolid-State Electronics, 1968
- A self-consistent iterative scheme for one-dimensional steady state transistor calculationsIEEE Transactions on Electron Devices, 1964
- Frequency dependence of the reverse-biased capacitance of gold-doped silicon P+N step junctionsIEEE Transactions on Electron Devices, 1964
- Effects of Electrons and Holes on the Transition Layer Characteristics of Linearly Graded P-N JunctionsProceedings of the IRE, 1961
- Potential Distribution and Capacitance of a Graded p-n JunctionBell System Technical Journal, 1960
- Diffusion of Donor and Acceptor Elements in SiliconJournal of Applied Physics, 1956
- Einkristalle undpn-Schichtkristalle aus SiliziumThe European Physical Journal A, 1954
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949