Atomic arsenic detection by ArF laser-induced fluorescence

Abstract

Arsenic atoms sputtered from gallium arsenide wafers or arsenic-doped n-type silicon wafers have been detected in argon plasmas using the laser-induced fluorescence technique (LIF). Two methods of LIF detection were employed. One used a tunable, frequency-doubled dye laser to pump a metastable transition of atomic arsenic at 228.81 nm. The second technique used the broadband output of an ArF excimer laser to pump a ground-state transition of As at 193.76 nm.