A model for tunneling-limited breakdown in high-power HEMTs
- 24 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- W-band high efficiency InP-based power HEMT with 600 GHz f/sub max/IEEE Microwave and Guided Wave Letters, 1995
- A 60-GHz high efficiency monolithic power amplifier using 0.1-μm PHEMT'sIEEE Microwave and Guided Wave Letters, 1995
- Off-state breakdown in InAlAs/InGaAs MODFET'sIEEE Transactions on Electron Devices, 1995
- Breakdown analysis of an asymmetrical double recessed power MESFET'sIEEE Transactions on Electron Devices, 1995
- Power FETs Families. Capabilities and Limitations from 1 to 100 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1994
- Impact ionization and light emission in high-power pseudomorphic AlGaAs/InGaAs HEMTsIEEE Transactions on Electron Devices, 1993
- An AlGaAs/InGaAs pseudomorphic high electron mobility transistor with improved breakdown voltage for X- and Ku-band power applicationsIEEE Transactions on Microwave Theory and Techniques, 1993
- Breakdown voltage enhancement from channel quantization in InAl/As/n/sup +/-InGaAs HFET'sIEEE Electron Device Letters, 1992
- An analytic solution of the two-dimensional poisson equation and a model of gate current and breakdown voltage for reverse gate-drain bias in GaAs MESFETsSolid-State Electronics, 1989
- Power-limiting breakdown effects in GaAs MESFET'sIEEE Transactions on Electron Devices, 1981