MODFET Ensemble Monte Carlo model including the quasi-two-dimensional electron gas
- 1 May 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 33 (5), 677-681
- https://doi.org/10.1109/t-ed.1986.22551
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Physics and modelling of hot electron effects in submicron devicesPhysica B+C, 1985
- Degeneracy in the ensemble Monte Carlo method for high-field transport in semiconductorsIEEE Transactions on Electron Devices, 1985
- Modeling for an AlGaAs/GaAs heterostructure device using Monte Carlo simulationIEEE Electron Device Letters, 1985
- Investigation of plasmon-induced losses in quasi-ballistic transportIEEE Electron Device Letters, 1985
- Electron mobility in modulation-doped heterostructuresPhysical Review B, 1984
- Low temperature two-dimensional mobility of a GaAs heterolayerSurface Science, 1984
- Selectively dopedn-AlxGa1?xAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistorsApplied Physics A, 1984
- Metal-(n) AlGaAs-GaAs two-dimensional electron gas FETIEEE Transactions on Electron Devices, 1982
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Quantum properties of surface space-charge layersC R C Critical Reviews in Solid State Sciences, 1973