A Survey of Present Compact Models for High-Speed Bipolar Transistors
- 1 January 1993
- journal article
- research article
- Published by Walter de Gruyter GmbH in Frequenz
- Vol. 47 (7-8), 178-190
- https://doi.org/10.1515/freq.1993.47.7-8.178
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- 30 Gbit/s multiplexer and demultiplexer ICs in silicon bipolar technologyElectronics Letters, 1992
- TRANSIENT AND SMALL‐SIGNAL HIGH‐FREQUENCY SIMULATION OF NUMERICAL DEVICE MODELS EMBEDDED IN AN EXTERNAL CIRCUITCOMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 1991
- 10 Gbit/s optical front end using Si-bipolar preamplifier IC, flipchip APD, and slant-end fibreElectronics Letters, 1991
- A charge-based large-signal bipolar transistor model for device and circuit simulationIEEE Transactions on Electron Devices, 1989
- A compact physical large-signal model for high-speed bipolar transistors at high current densities—Part I: One-dimensional modelIEEE Transactions on Electron Devices, 1987
- A compact physical large-signal model for high-speed bipolar transistors at high current densities—Part II: Two-dimensional model and experimental resultsIEEE Transactions on Electron Devices, 1987
- Physical modeling of high-current transients for bipolar transistor circuit simulationIEEE Transactions on Electron Devices, 1987
- Current gain and cutoff frequency falloff at high currentsIEEE Transactions on Electron Devices, 1969
- A distributed model of the junction transistor and its application in the prediction of the emitter-base diode characteristic, base impedance, and pulse response of the deviceIEEE Transactions on Electron Devices, 1965
- On the Variation of Junction-Transistor Current-Amplification Factor with Emitter CurrentProceedings of the IRE, 1954