A 10×10 thin-film transistor (TFT) matrix has been fabricated using a molecular beam deposited polycrystalline silicon film on a glass substrate by low-temperature (below 600°C) fabrication processes. The field-effect mobility of the TFT element is 40 cm2/V·s at a gate voltage of 10 V, and the response time is less than 10 ns. Combining the TFT matrix with a twisted-nematic liquid-crystal layer, a transmissive-type active matrix liquid-crystal display. It has been shown that the polycrystalline silicon TFT matrix is compatible with a liquid-crystal cell both from the viewpoint of device fabrication and of TFT characteristics.