A transmission electron microscopy (TEM) study of a wedge-shaped InAs epitaxial layer on GaAs (001) grown by molecular beam epitaxy (MBE)
- 1 July 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 121 (3), 381-393
- https://doi.org/10.1016/0022-0248(92)90148-c
Abstract
No abstract availableKeywords
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