Tight-binding model for GaAs/AlAs resonant-tunneling diodes
- 15 February 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 43 (6), 4777-4784
- https://doi.org/10.1103/physrevb.43.4777
Abstract
Models of resonant-tunneling diodes based on the envelope-function approximation often give unsatisfactory results. In order to address some of the shortcomings of these models, we employ a tight-binding model that allows more careful treatment of heterointerfaces than is possible in the envelope-function approach. We use transfer matrices to carry out the calculation and present an improved method that allows us to transfer across larger device dimensions (>1000 Å), thereby permitting us to include space-charge regions in the model. We compare results obtained with the tight-binding and envelope-function approximations.Keywords
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