Growth and properties of In-doped CdMnTe-CdTe superlattices
- 16 March 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (11), 691-693
- https://doi.org/10.1063/1.98068
Abstract
The first successful substitutional doping of dilute magnetic semiconductor superlattices composed of alternating layers of CdMnTe and CdTe is reported. These n-type In-doped multilayer structures were prepared using a new thin-film growth technique, photoassisted molecular beam epitaxy, in which the substrate is illuminated with visible light during the deposition process. The electrical, optical, and structural properties of the CdMnTe-CdTe superlattices are discussed.Keywords
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