Electrical characterization of vapor-phase epitaxially grown large-area n-AlAs—P-GaAs heterojunctions

Publisher Website

1 February 1977

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 24 (2), 135-140
https://doi.org/10.1109/t-ed.1977.18692

Abstract

The heterojunction formed by n-AlAs grown by vapor-phase chloride transport on commercially obtained

Keywords

Cited by 4 articles