Model for theCenter in Si
- 7 September 1970
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 25 (10), 650-652
- https://doi.org/10.1103/physrevlett.25.650
Abstract
A theoretical model is presented for both the permanent and transient centers in Si together with a mechanism for their optical excitation. The model presented involves the Heitler-London description of Si-O bonding. Experimental tests for verification of the model are discussed in some detail.
Keywords
This publication has 7 references indexed in Scilit:
- The Valence Bond Approximation in Crystals — Application to an Analysis of the Ultraviolet Spectrum in QuartzPhysica Status Solidi (b), 1968
- Electron Spin Resonance in Neutron-Irradiated QuartzJournal of Applied Physics, 1961
- Trapped Electrons in Irradiated Quartz and Silica: II, Electron Spin ResonanceJournal of the American Ceramic Society, 1960
- Trapped Electrons in Irradiated Quartz and Silica: I, Optical AbsorptionJournal of the American Ceramic Society, 1960
- LCAO Self-Consistent Field Calculation of the Ground State of Carbon DioxideThe Journal of Chemical Physics, 1951
- Quelques aspects de la théorie des orbitales moléculairesJournal de Chimie Physique et de Physico-Chimie Biologique, 1949
- Atomic Shielding ConstantsPhysical Review B, 1930