BF2 ion implantation in silicon through surface oxides, behaviour of the fluorine with rapid thermal annealing
- 31 August 1987
- journal article
- Published by Elsevier in Materials Letters
- Vol. 5 (9), 311-314
- https://doi.org/10.1016/0167-577x(87)90118-2
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Elimination of end-of-range and mask edge lateral damage in Ge+ preamorphized, B+ implanted SiApplied Physics Letters, 1986
- Rapid thermal and pulsed laser annealing of boron fluoride-implanted siliconJournal of Applied Physics, 1985
- A Structural and Electrical Comparison of BCl and BF 2 Ion‐Implanted SiliconJournal of the Electrochemical Society, 1985
- Structural and electrical properties of BF+2 implanted, rapid annealed siliconApplied Physics Letters, 1984
- Shallow boron junctions implanted in silicon through a surface oxideIEEE Electron Device Letters, 1984
- Boron, fluorine, and carrier profiles for B and BF2 implants into crystalline and amorphous SiJournal of Applied Physics, 1983
- Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2 or Si++B+Journal of Applied Physics, 1979
- Regrowth behavior of ion-implanted amorphous layers on 〈111〉 siliconApplied Physics Letters, 1976