Surface dynamics studied by perturbing the surface with the tip of a scanning tunneling microscope—Si(100) at 80 K
- 1 July 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (1), 40-42
- https://doi.org/10.1063/1.121716
Abstract
We have utilized the tip of a scanning tunneling microscope to perturb a specific local structure (the C defect) of Si(100) at 80 K, and observed the dynamical symmetric⇔buckled transition of the surrounding dimers. The observed large-scale transition implies that the configuration of the dimers is determined by a detailed balance among many elastic long-range forces generated by the surrounding C defects.Keywords
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