Epitaxial growth of Ge on 〈100〉 Si by a simple chemical vapor deposition technique
- 1 August 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (3), 245-247
- https://doi.org/10.1063/1.92695
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Solid-phase heteroepitaxy of Ge on 〈100〉SiApplied Physics Letters, 1981
- The silicon-germanium n-p heterojunctionBritish Journal of Applied Physics, 1964
- Passivity during the Oxidation of Silicon at Elevated TemperaturesJournal of Applied Physics, 1958