Charge generation in thin SiO2 polysilicon-gate MOS capacitors
- 31 August 1987
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 30 (8), 829-834
- https://doi.org/10.1016/0038-1101(87)90008-6
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Generation of positive charge in silicon dioxide during avalanche and tunnel electron injectionJournal of Applied Physics, 1985
- Electrical breakdown in thin gate and tunneling oxidesIEEE Transactions on Electron Devices, 1985
- Conséquences d'une injection tunnel Fowler-Nordheim dans des structures MOS à oxyde minceRevue de Physique Appliquée, 1985
- MOSFET degradation due to stressing of thin oxideIEEE Transactions on Electron Devices, 1984
- Charge Build up and Breakdown in Thin Sio2 Gate DielectricsIEEE Transactions on Electrical Insulation, 1984
- Electron trapping/detrapping within thin SiO2 films in the high field tunneling regimeJournal of Applied Physics, 1983
- The Effect of a Constant Current Stress on the Oxides in MOS CapacitorsJournal of the Electrochemical Society, 1983
- Current induced trap generation in SiO2Applied Physics Letters, 1982
- Positive and negative charging of thermally grown SiO2 induced by Fowler-Nordheim emissionJournal of Applied Physics, 1981
- Dielectric breakdown in electrically stressed thin films of thermal SiO2Journal of Applied Physics, 1978