Analysis of low-energy electron transmission experiments through thin solid xenon films in the elastic scattering region

Abstract

In this paper, we derive a relation between the current $I_t$ transmitted by a thin dielectric film as a function of incident electron energy E and the electronic energy-band structure of the film, with application to solid xenon. The analysis of $I_t$(E) in the elastic scattering region allows one to determine the electronic conduction-band density of states and to calculate the electron mean free path as a function of energy. It provides also a useful tool for determining the quasi-free electron ground-state energy $V_0$ of the solid.