Photoluminescence from Be-implanted GaAs
- 15 November 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 27 (10), 567-569
- https://doi.org/10.1063/1.88289
Abstract
Low‐temperature (6 °K) photoluminescence data on Be‐implanted GaAs are presented. A luminescence band centered at 1.4902 eV is related to recombination involving the Be acceptor. Annealing to 900 °C with Si3N4 encapsulation is shown to optically activate the implanted Be and reorder the lattice. The ionization energy of Be is estimated to be 22±3 meV.Keywords
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