Recrystallization of CIGSe layers grown by three-step processes: A model based on grain boundary migration
- 31 October 2010
- journal article
- Published by Elsevier in Acta Materialia
- Vol. 58 (17), 5572-5577
- https://doi.org/10.1016/j.actamat.2010.06.025
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Atom probe study of sodium distribution in polycrystalline Cu(In,Ga)Se2 thin filmActa Materialia, 2010
- 19·9%‐efficient ZnO/CdS/CuInGaSe2 solar cell with 81·2% fill factorProgress In Photovoltaics, 2008
- Copper Indium Selenides and Related Materials for Photovoltaic DevicesCritical Reviews in Solid State and Materials Sciences, 2002
- Defect-induced nonpolar-to-polar transition at the surface of chalcopyrite semiconductorsPhysical Review B, 2001
- Texture manipulation of CuInSe 2 thin filmsThin Solid Films, 2000
- Phase segregation, Cu migration and junction formation in Cu(In, Ga)Se2The European Physical Journal Applied Physics, 1999
- Current issues in recrystallization: a reviewMaterials Science and Engineering: A, 1997
- A model for the successful growth of polycrystalline films of CuInSe2 by multisource physical vacuum evaporationAdvanced Materials, 1993
- Surface passivation of polycrystalline, chalcogenide based photovoltaic cellsSolar Cells, 1991
- MIGRATION DES JOINTS DE GRAINS.LA MIGRATION DES JOINTS INTERGRANULAIRESLe Journal de Physique Colloques, 1975