Effect of interparticle collisions on energy relaxation of carriers in semiconductors
- 30 November 1985
- journal article
- Published by Elsevier in Physica B+C
- Vol. 134 (1-3), 369-373
- https://doi.org/10.1016/0378-4363(85)90373-0
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Effect of impurity scattering on the hole drift velocity in germaniumPhysical Review B, 1978
- Electron drift velocity in siliconPhysical Review B, 1975
- Monte Carlo treatment of electron-electron collisionsSolid State Communications, 1975
- Influence of E–E scattering on the phenomenological energy relaxation time in nonpolar semiconductorsPhysica Status Solidi (b), 1975