Observation of a Coupled Phonon-Damped-Plasmon Mode in-GaAs by Raman Scattering
- 16 December 1974
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 33 (25), 1481-1484
- https://doi.org/10.1103/physrevlett.33.1481
Abstract
We have observed a coupled mode of a phonon with a plasmon in the Landau damping region for the first time by Raman scattering from heavily doped -GaAs specimens at 100 K with the use of Ar-ion laser lines. The line shape as well as the dispersion relation was calculated by taking into account the nonlocal effect caused by the motion of free carriers, giving good agreement with the observed spectra.
Keywords
This publication has 19 references indexed in Scilit:
- Polarization and Intensity of Raman Scattering from Plasmons and Phonons in Gallium ArsenidePhysical Review Letters, 1967
- Interaction of Plasmons and Optical Phonons in Degenerate SemiconductorsPhysical Review B, 1966
- Observation of the Interaction of Plasmons with Longitudinal Optical Phonons in GaAsPhysical Review Letters, 1966
- Scattering of Electromagnetic Radiation by a Nonequilibrium Electron-Phonon SystemPhysical Review B, 1965
- RAMAN SCATTERING IN SILICONApplied Physics Letters, 1965
- Coupling of Plasmons to Polar Phonons in Degenerate SemiconductorsPhysical Review B, 1965
- The Raman effect in crystalsAdvances in Physics, 1964
- Optical Properties of SemiconductorsPhysical Review B, 1963
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962
- On the Coupling between Optical Lattice Vibrations and Carrier Plasma Oscillations in Polar SemiconductorsJournal of the Physics Society Japan, 1961