Organometallic chemical vapor deposition of high T c superconducting films using a volatile, fluorocarbon-based precursor
- 31 October 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (18), 1750-1752
- https://doi.org/10.1063/1.100473
Abstract
Uniform films of the high Tc superconductor YBa2Cu3O7−δ have been prepared by organometallic chemical vapor deposition using the volatile metalorganic precursors Cu(acetylacetonate)2, Y(dipivaloylmethanate)3, and Ba(heptafluorodimethyloctanedionate)2. With argon as a carrier gas and water vapor as a reactant, film growth rates of 10–30 nm/min are achieved. After annealing under oxygen, energy dispersive x-ray analysis, profilometry, and x-ray diffraction data reveal that such YBa2Cu3O7−δ films on [100] single-crystal MgO have good compositional and dimensional uniformity as well as preferential orientation of crystallite c axes perpendicular to the substrate surface. Four-probe resistivity measurements reveal the onset of superconductivity at ∼90 K and zero resistance by 66.2 K.Keywords
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