Continuous operation of high-power (200 mW) strained-layer Ga1−xInxAs/GaAs quantum-well lasers with emission wavelengths 0.87 ≤ λ ≤ 0.95 μm

Abstract

Separate confinement single-quantum-well lasers with 100–120 Å-thick strained Ga1−xInxAs/GaAs active layers have been grown on (100) GaAs substrates by metalorganic chemical vapour deposition. Ten-stripe proton-implanted arrays with 90 μm-wide aperture and 250μm cavity length emit 200 mW CW optical power at wavelengths 0.87 ≤ λ ≤0.95 μm. Lifetest data on an uncoated device emitting 90 mW/facet at 50°C and λ = 0.95 μm suggest a mean-time-to-failure in excess of 2500 h at room temperature. The performance of lasers with strained Ga1−xInxAs quantum wells is comparable to that of unstrained AlxGa1−xAs/GaAs quantum-well lasers without facet coating.