Electrical properties of n‐Type GaN
- 1 January 1977
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 12 (9), 961-965
- https://doi.org/10.1002/crat.19770120910
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- Epitaxial growth and electrical properties of GaN‐AlN solid solutionsCrystal Research and Technology, 1977
- Optimized growth conditions and properties of N-type and insulating GaNMaterials Research Bulletin, 1976
- Monte Carlo calculation of the velocity-field relationship for gallium nitrideApplied Physics Letters, 1975
- Influence of growth conditions on the electrical properties of pyrolytically deposited GaNCrystal Research and Technology, 1975
- Preparation of epitaxial galliumnitrideMaterials Research Bulletin, 1974
- Infrared Lattice Vibrations and Free-Electron Dispersion in GaNPhysical Review B, 1973
- Heteroepitaxial Thermal Gradient Solution Growth of GaNJournal of the Electrochemical Society, 1972
- Calculation of Energy-Band Pressure Coefficients from the Dielectric Theory of the Chemical BondPhysical Review Letters, 1971
- High-Electric-Field Galvanomagnetic Effects in Piezoelectric SemiconductorsPhysical Review B, 1968
- The theory of electronic conduction in polar semi-conductorsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1953