New technique for molecular-dynamics computer simulations: Hellmann-Feynman theorem and subspace Hamiltonian approach
- 15 May 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (10), 7099-7101
- https://doi.org/10.1103/physrevb.33.7099
Abstract
In the past, molecular-dynamics computer simulations have employed model potentials of the interaction between atoms. Here we introduce a new molecular-dynamics technique in which atomic forces are computed from the total electronic energy of the system of interacting atoms. The method is illustrated by trajectories for Al and As atoms scattering off the relaxed (110) surface of GaAs.Keywords
This publication has 11 references indexed in Scilit:
- Computer simulations of surfaces, interfaces, and physisorbed filmsJournal of Vacuum Science & Technology B, 1984
- Surface defects on semiconductorsSurface Science, 1983
- Chemisorption-induced defects at interfaces on compound semiconductorsSurface Science, 1983
- The dynamics of adsorption, desorption and surface diffusionSurface Science, 1983
- A Semi-empirical tight-binding theory of the electronic structure of semiconductors†Journal of Physics and Chemistry of Solids, 1983
- Fermi level and surface barrier of GaxIn1−xAs alloysApplied Physics Letters, 1981
- Unified defect model and beyondJournal of Vacuum Science and Technology, 1980
- New and unified model for Schottky barrier and III–V insulator interface states formationJournal of Vacuum Science and Technology, 1979
- A green's function theory of surface statesSurface Science, 1971
- Calculation of Dynamical Surface Properties of Noble-Gas Crystals. II. Molecular DynamicsPhysical Review B, 1969