Low threshold voltage ZnSe:Mn thin-film electroluminescent cells prepared by molecular-beam growth method

1 April 1983

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 30 (4), 282-284
https://doi.org/10.1109/t-ed.1983.21118

Abstract

Au/ZnSe:Mn/n-GaAs and Al/ZnSe:Mn/ITO dc-operated electroluminescent (EL) cells were prepared by molecular-beam epitaxy (MBE) and molecular-beam deposition(MBD), respectively. The threshold voltages achieved in each type of EL cells are lower than any other values reported so far. The ZnSe : Mn layer grown by MBE on a GaAs substrate was single-crystalline while the ZnSe:Mn layer deposited by MBD on an ITO-coated glass substrate was polycrystalline, only

Keywords

THRESHOLD VOLTAGE
GOLD
TRANSISTORS
ELECTROLUMINESCENCE
GALLIUM ARSENIDE
INDIUM TIN OXIDE

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