Hgl-xCdxTe is becoming increasingly important for the preparation of both monolithic and hybrid infrared focal plane arrays. The preparation of such devices utilizing thin film HgCdTe is very attractive due to its cost-effective feature. Based on a study carried out at General Dynamics, sputtering, which minimizes the vapor pressure problems of HgCdTe deposition, promises to be a relatively simple, inexpensive and versatile technique for preparing high quality single crystal Hgl-xCdxTe films with electronic properties suitable for array (large area) fabrication. This paper reports on the initial results of this study which support this claim.