Amorphous oxide precipitates in silicon single crystals
- 1 November 1988
- journal article
- letter
- Published by Springer Nature in Nature
- Vol. 336 (6197), 364-365
- https://doi.org/10.1038/336364a0
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Is enhanced interstitial oxygen diffusion necessary to explain the kinetics of precipitation in silicon at temperatures below 650 degrees C?Semiconductor Science and Technology, 1987
- Early stages of oxygen segregation and precipitation in siliconJournal of Applied Physics, 1984
- Diffusion limited precipitation of oxygen in dislocation-free siliconApplied Physics Letters, 1983