Antiphasing mechanism of orderedlayers grown on GaAs (001)
- 15 February 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 57 (8), 4642-4648
- https://doi.org/10.1103/physrevb.57.4642
Abstract
layers grown by metal-organic chemical-vapor deposition on (001)-oriented GaAs substrates have been studied using transmission electron microscopy. Additional extra diffraction spots found in several projections around the [001] pole and a streaking parallel to the [001] direction observed in the [110] projection are interpreted as due to a laminar structure of the samples consisting of two variants of the CuPt structure with orderings on the 11) and (11) planes distributed in alternating (001)-oriented laminae. The results of our valence-force-field calculations, including—in an approximate way—the surface reconstruction, suggest a possible origin of the laminar growth. The band-gap reduction of the simplest laminar structures relative to the average gap of the binaries has been calculated by means of the relativistic linear-muffin-tin-orbital method, and found to be significantly lower than that of the CuPt phase.
Keywords
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